dual matched npn silicon transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8570 issue 1 page 1 of 3 2N2060 / 2N2060a matched dual npn transistors low power hermetically sealed to-77 metal package high reliability screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v ceo collector ? emitter voltage 60v v cer collector ? emitter voltage 80v v cbo collector ? base voltage 100v v ebo emitter ? base voltage 7v i c continuous collector current 500ma per side per side per side per side total device total device total device total device p d total power dissipation at t a = 25c 540 mw 600 mw derate above 25c 3.08 mw/c 3.48 mw/c t c = 25c 1.5w 2.12w derate above 25c 8.6 mw/c 12.1 mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c
dual matched npn silicon transistor 2N2060 / 2N2060a semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8570 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min typ max unit s v cb = 80v i e = 0 0.002 i cbo collector-cut-off current t a = 150c 10 a i ebo emitter cut-off current v be = 5v i c = 0 2.0 na v (br)cbo collector-base breakdown voltage i c = 100a i e = 0 100 v (br)ebo emitter-base breakdown voltage i e = 100a i c = 0 7 v (br)cer (1) collector ? emitter breakdown voltage i c = 100ma r be 10 w 80 v (br)ceo (1) collector ? emitter breakdown voltage i c = 30ma i b = 0 60 v be(sat) base-emitter saturation voltage i c = 50ma i b = 5ma 0.9 2N2060a i c = 50ma i b = 5ma 0.6 2N2060 v ce(sat) collector - emitter saturation voltage i c = 50ma i b = 5ma 1.2 v i c = 10a v ce = 5v 25 75 i c = 100a v ce = 5v 30 90 i c = 1.0ma v ce = 5v 40 120 h fe forward-current transfer ratio i c = 10ma v ce = 5v 50 150 - dynamic characteristics i c = 50ma v ce = 10v f t current gain bandwidth product f = 20mhz 60 mhz i c = 1.0ma v ce = 5v h fe small-signal current gain f = 1.0khz 50 150 - i c = 1.0ma v ce = 5v h ie (3) input impedance f = 1.0khz 1000 4000 i c = 1.0ma v cb = 10v h ib (3) input impedance f = 1.0khz 20 30 w v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 15 pf v be = 0.5v i c = 0 c ibo input capacitance f = 1.0mhz 85 pf notes notes notes notes (1) pulse width 300us, 2% (2) the lowest h fe reading is taken as h fe1 for this ratio (3) parameter by design only
dual matched npn silicon transistor 2N2060 / 2N2060a semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8570 issue 1 page 3 of 3 matching characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min typ max unit s i c = 100a v ce = 5v 0.9 1.0 h fe1/ h fe2 dc current gain ratio (2) i c = 1.0ma v ce = 5v 0.9 1.0 - i c = 100a v ce = 5v 3.0 ? v be1- v be2 ? base ? emitter voltage differential i c = 1.0ma v ce = 5v 5.0 mv i c = 1.0ma v ce = 5v ( ) t be2 v - be1 v d d base ?emitter voltage differential change due to temperature t a = -55c to +125c 5.0 v/ c mechanical data dimensions in mm (inches) 1.02 (0.040) max. 12 . 7 ( 0 . 500 ) m i n . 6 . 10 ( 0 . 240 ) 6 . 60 ( 0 . 260 ) 8.51 (0.335)9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 0.74 (0.029)1.14 (0.045) 1 6 4 3 2 45? 0.71 (0.028)0.86 (0.034) 0.41 (0.016)0.53 (0.021) 5 to - 77 (mo - 002af) metal package pin 1 ? collector pin 4 ? emitter pin 2 ? base pin 5 ? base pin 3 ? emitter pin 6 ? collector
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